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Creators/Authors contains: "Reich, Carey"

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  1. ; ; ; ; ; (, IEEE Journal of Photovoltaics)
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  2. ; ; ; ; ; ; (, Thin Solid Films)
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  3. ; ; ; ; ; ; (, Solar RRL)
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  4. ; ; ; ; ; ; ; ; ; ; et al (, Solar Energy Materials and Solar Cells)
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  5. ; ; ; ; ; ; ; ; ; ; et al (, Nature Energy)
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  6. ; ; ; ; ; ; ; ; ; ; et al (, Solar Energy Materials and Solar Cells)
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  7. ; ; ; ; ; ; ; ; ; ; et al (, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC))
    A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (V OC. ) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage. 
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  8. ; ; ; ; ; ; ; ; (, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC))
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  9. ; ; ; ; ; ; (, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC))
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  10. ; ; ; ; ; ; ; ; ; ; et al (, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC))
    CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ~850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells. 
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